any changing of specification will not be informed individual BC847S npn silicon multi-chip transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com ele k troni sche bauelemente c 1 b 2 e 2 e 1 b 1 c 2 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t * features p o w e r d i s s i p a t i o n p c m : 0 . 3 w ( t a m p . = 2 5 c ) c o l l e c t o r c u r r e n t i c m : 0 . 2 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 5 0 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 c ~ + 1 5 0 c o o o e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d ) collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 10 ma, i b =0 45 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb = 30 v, i e =0 15 na dc current gain h fe(1) v ce = 5 v, i c = 2 ma 110 630 v ce(sat) i c = 10 ma, i b = 0.5 ma 0.25 v collector-emitter saturation voltage v ce(sat)(2) i c = 100 ma, i b =5ma 0.65 v v be v ce = 5 v, i c = 2 ma 0.7 v base-emitter voltage v be(2) v ce = 5 v, i c = 10 ma 0.77 v transition frequency f t v ce = 5 v, i c = 20 ma , f= 100 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 2 pf 01 -jan-2006 rev. b page 1 of 3 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) . 0 1 4 ( 0 . 3 5 ) . 0 0 6 ( 0 . 1 5 ) . 0 8 7 ( 2 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 5 5 ( 1 . 4 0 ) . 0 4 7 ( 1 . 2 0 ) . 0 2 6 t y p ( 0 . 6 5 t y p ) . 0 9 6 ( 2 . 4 5 ) . 0 8 5 ( 2 . 1 5 ) . 0 2 1 r e f ( 0 . 5 2 5 ) r e f . 0 1 8 ( 0 . 4 6 ) . 0 1 0 ( 0 . 2 6 ) . 0 0 6 ( 0 . 1 5 ) . 0 0 3 ( 0 . 0 8 ) . 0 5 3 ( 1 . 3 5 ) . 0 4 5 ( 1 . 1 5 ) . 0 4 3 ( 1 . 1 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 3 9 ( 1 . 0 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 0 0 ( 0 . 0 0 ) 8 o o 0
any changing of specification will not be informed individual BC847S npn silicon multi-chip transistor http://www.secosgmbh.com ele k troni sche bauelemente typical characteristics collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.05 0.1 0.15 0.2 0.25 0.3 i - collector current (ma) v - collector-emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 typical pulsed current gain vs collector current 0.01 0.03 0.1 0.3 1 3 10 30 100 0 200 400 600 800 1000 1200 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5.0 v ce base-emitter saturation voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - collector-emitter voltage (v) c besat = 10 25 c - 40 c 125 c base-emitter on voltage vs collector current 0.1 1 10 40 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) c beon v = 5.0 v ce 25 c - 40 c 125 c contours of constant gain bandwidth product (f ) 0.1 1 10 100 1 2 3 5 7 10 i - collector current (ma) v - collector voltage (v) c 175 mhz t ce 150 mhz 125 mhz 75 mhz 100 mhz normalized collect or-cutoff curre nt vs ambie nt temperature 25 50 75 100 125 150 1 10 10 0 1000 t - ambie nt temp erature ( c) ch ar ac ter is tic s r elati ve to valu e at t = 25 c a a 01 -j a n-200 6 rev. b page 2 of 3
any changing of specification will not be informed individual BC847S npn silicon multi-chip transistor http://www.secosgmbh.com elektronische bauelemente contours of constant gain bandwidth product (f ) 0.1 1 10 100 1 2 3 5 7 10 i - collector current (ma) v - collector voltage (v) c 175 mhz t ce 150 mhz 125 mhz 75 mhz 100 mhz normalized collect or-cutoff curre nt vs ambie nt temperature 25 50 75 100 125 150 1 10 10 0 1000 t - ambie nt temp erature ( c) ch ar ac ter is tic s r elati ve to valu e at t = 25 c a a power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 temperature ( c) p - power dissipation (mw) o d sc70-6 wideband noise frequency vs source resistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 1 2 3 4 5 r - source resistance ( ) nf - noise figure (db) v = 5.0 v bandwidt h = 15.7 khz ce i = 10 a c i = 100 a c s ? i = 30 a c noise figure vs frequency 0.0001 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 f - frequency (mhz) nf - noise figure (db) v = 5.0v ce i = 200 a, r = 10 k ? c s i = 1.0 ma, r = 500 ? c s i = 100 a, r = 10 k ? c s i = 1.0 ma, r = 5.0 k ? c s 01 -j a n-200 6 rev. b page 3 of 3
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